All MOSFET. CES2320 Datasheet

 

CES2320 Datasheet and Replacement


   Type Designator: CES2320
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SOT23
 

 CES2320 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CES2320 Datasheet (PDF)

 ..1. Size:478K  cet
 ces2320.pdf pdf_icon

CES2320

CES2320N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 5.2A, RDS(ON) = 29m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Lead free product is acquired.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Vol

 8.1. Size:919K  cet
 ces2322.pdf pdf_icon

CES2320

CES2322N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 6.2A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 30m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Lead-free plating ; RoHS compliant.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units

 8.2. Size:387K  cet
 ces2323.pdf pdf_icon

CES2320

CES2323P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -4.2A, RDS(ON) = 48m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source

 8.3. Size:453K  cet
 ces2324.pdf pdf_icon

CES2320

CES2324N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 4.2A, RDS(ON) = 45m @VGS = 4.5V. RDS(ON) = 80m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Lead free product is acquired.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Vo

SHOW MORE

Datasheet: CEN7002A , CES2302 , CES2306 , CES2308 , CES2310 , CES2312 , CES2314 , CES2316 , IRF1404 , CES2324 , CES2342 , CES2362 , CET0215 , CET04N10 , CET3055L , CET3252 , CET6426 .

Keywords - CES2320 MOSFET datasheet

 CES2320 cross reference
 CES2320 equivalent finder
 CES2320 lookup
 CES2320 substitution
 CES2320 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.