CEU4269 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEU4269

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 10.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14(12) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10(5) nS

Cossⓘ - Capacitancia de salida: 155(150) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: TO252

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CEU4269 datasheet

 ..1. Size:584K  cet
 ceu4269.pdf pdf_icon

CEU4269

CEU4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V , -12A , RDS(ON) = 45m @VGS = 10V. RDS(ON) = 65m @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 D1/D2 Lead free product is acquired. S1

 9.1. Size:680K  cet
 ceu4279 ced4279.pdf pdf_icon

CEU4269

CED4279/CEU4279 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V , -9A , RDS(ON) = 72m @VGS = 10V. RDS(ON) = 110m @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 D1/D2 Lead free product is acqui

 9.2. Size:405K  cet
 ceu4204 ced4204.pdf pdf_icon

CEU4269

CED4204/CEU4204 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 24A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM

 9.3. Size:381K  cet
 ced4201 ceu4201.pdf pdf_icon

CEU4269

CED4201/CEU4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS(ON) = 26m @VGS = -10V. RDS(ON) = 36m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAX

MOSTRAR MÁS

Otros transistores... CES2324, CES2342, CES2362, CET0215, CET04N10, CET3055L, CET3252, CET6426, AON6414A, CEU4279, CEV2306, CEA6861, CEB05P03, CEB12P10, CEB14P20, CEB15P15, CEB20P06