CEU4269 - параметры транзистора MOSFET, его аналоги, datasheet

CEU4269 Datasheet (PDF)

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CEU4269Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURESD1/D240V , 14A , RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V.-40V , -12A , RDS(ON) = 45m @VGS = 10V. RDS(ON) = 65m @VGS = 4.5V.G1 G2Super high dense cell design for extremely low RDS(ON).High power and current handing capability.S1 S2D1/D2Lead free product is acquired.S1

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ceu4279 ced4279.pdf pdf_icon

CED4279/CEU4279Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURESD1/D240V , 14A , RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V.-40V , -9A , RDS(ON) = 72m @VGS = 10V. RDS(ON) = 110m @VGS = 4.5V.G1 G2Super high dense cell design for extremely low RDS(ON).High power and current handing capability.S1 S2D1/D2Lead free product is acqui

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CED4204/CEU4204N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 24A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM

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CED4201/CEU4201P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -28A, RDS(ON) = 26m @VGS = -10V. RDS(ON) = 36m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAX

Другие MOSFET... CES2324 , CES2342 , CES2362 , CET0215 , CET04N10 , CET3055L , CET3252 , CET6426 , IRFB4110 , CEU4279 , CEV2306 , CEA6861 , CEB05P03 , CEB12P10 , CEB14P20 , CEB15P15 , CEB20P06 .