CEB14P20 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEB14P20
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 139 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 13.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 74 nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de CEB14P20 MOSFET
CEB14P20 PDF Specs
cef14p20 cep14p20 ceb14p20.pdf
CEP14P20/CEB14P20 CEF14P20 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14P20 -200V 0.36 -13.5A -10V CEB14P20 -200V 0.36 -13.5A -10V CEF14P20 -200V 0.36 -13.5A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIE... See More ⇒
cep14a04 ceb14a04.pdf
CEP14A04/CEB14A04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note... See More ⇒
cep14g04 ceb14g04.pdf
CEP14G04/CEB14G04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 140A, RDS(ON) = 3.6m @VGS = 10V. RDS(ON) = 6.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS... See More ⇒
cep140n10 ceb140n10.pdf
CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise... See More ⇒
Otros transistores... CET3252 , CET6426 , CEU4269 , CEU4279 , CEV2306 , CEA6861 , CEB05P03 , CEB12P10 , IRFP250N , CEB15P15 , CEB20P06 , CEB20P10 , CEB30P03 , CEB35P10 , CEB50P03 , CEB6601 , CEB95P04 .
History: JMSH0704PE
History: JMSH0704PE
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP4688S | AP4606 | AP4580 | AP4435C | AP4410 | AP4409S | AP4407C | AP4407 | AP3N50K | AP3N50F | AP3912GD | AP3415E | AP3404S | AP3404 | AP3205 | AP3139
Popular searches
2sk2586 | 13005 transistor | ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004 | ksc2073