All MOSFET. CEB14P20 Datasheet

 

CEB14P20 Datasheet and Replacement


   Type Designator: CEB14P20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO263
 

 CEB14P20 substitution

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CEB14P20 Datasheet (PDF)

 ..1. Size:385K  cet
 cef14p20 cep14p20 ceb14p20.pdf pdf_icon

CEB14P20

CEP14P20/CEB14P20CEF14P20PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP14P20 -200V 0.36 -13.5A -10VCEB14P20 -200V 0.36 -13.5A -10VCEF14P20 -200V 0.36 -13.5A d -10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIE

 9.1. Size:397K  cet
 cep14a04 ceb14a04.pdf pdf_icon

CEB14P20

CEP14A04/CEB14A04N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 180A, RDS(ON) = 5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note

 9.2. Size:421K  cet
 cep14g04 ceb14g04.pdf pdf_icon

CEB14P20

CEP14G04/CEB14G04N-Channel Enhancement Mode Field Effect Transistor FEATURES40V, 140A, RDS(ON) = 3.6m @VGS = 10V. RDS(ON) = 6.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS

 9.3. Size:383K  cet
 cep140n10 ceb140n10.pdf pdf_icon

CEB14P20

CEP140N10/CEB140N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 137A, RDS(ON) = 7.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

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Datasheet: CET3252 , CET6426 , CEU4269 , CEU4279 , CEV2306 , CEA6861 , CEB05P03 , CEB12P10 , AON7408 , CEB15P15 , CEB20P06 , CEB20P10 , CEB30P03 , CEB35P10 , CEB50P03 , CEB6601 , CEB95P04 .

History: HM13N50F | AP4800GM | SM4804DSK | TPCA8027-H | IRF421 | SSF2610E | P0765ATF

Keywords - CEB14P20 MOSFET datasheet

 CEB14P20 cross reference
 CEB14P20 equivalent finder
 CEB14P20 lookup
 CEB14P20 substitution
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