CEB14P20 Datasheet. Specs and Replacement

Type Designator: CEB14P20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO263

  📄📄 Copy 

CEB14P20 substitution

- MOSFET ⓘ Cross-Reference Search

 

CEB14P20 datasheet

 ..1. Size:385K  cet
 cef14p20 cep14p20 ceb14p20.pdf pdf_icon

CEB14P20

CEP14P20/CEB14P20 CEF14P20 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14P20 -200V 0.36 -13.5A -10V CEB14P20 -200V 0.36 -13.5A -10V CEF14P20 -200V 0.36 -13.5A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIE... See More ⇒

 9.1. Size:397K  cet
 cep14a04 ceb14a04.pdf pdf_icon

CEB14P20

CEP14A04/CEB14A04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note... See More ⇒

 9.2. Size:421K  cet
 cep14g04 ceb14g04.pdf pdf_icon

CEB14P20

CEP14G04/CEB14G04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 140A, RDS(ON) = 3.6m @VGS = 10V. RDS(ON) = 6.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS... See More ⇒

 9.3. Size:383K  cet
 cep140n10 ceb140n10.pdf pdf_icon

CEB14P20

CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise... See More ⇒

SHOW MORE

Detailed specifications: CET3252, CET6426, CEU4269, CEU4279, CEV2306, CEA6861, CEB05P03, CEB12P10, IRF630, CEB15P15, CEB20P06, CEB20P10, CEB30P03, CEB35P10, CEB50P03, CEB6601, CEB95P04

Keywords - CEB14P20 MOSFET specs

 CEB14P20 cross reference

 CEB14P20 equivalent finder

 CEB14P20 pdf lookup

 CEB14P20 substitution

 CEB14P20 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility