FDN335N Todos los transistores

 ..1. Size:81K  fairchild semi
 fdn335n.pdf

April 1999 FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features 1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 V This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.100 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resistance and yet maintain low gate cha

 ..2. Size:198K  onsemi
 fdn335n.pdf

FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features 1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 V This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench RDS(ON) = 0.100 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for Lo

 ..3. Size:1905K  htsemi
 fdn335n.pdf

FDN335N 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70m RDS(ON), Vgs@ 2.5V, Ids@ 1.5A= 100m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00

 ..4. Size:379K  umw-ic
 fdn335n.pdf

R UMW UMW FDN335N MOSFETS SOT-23 Plastic-Encapsulate FDN335N N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 70m @ 4.5V 20 V 1.7A 100m @ 2.5V FEATURE APPLICATION TrenchFET Power MOSFET Battery protection SOT 23 Supper high density cell design Load switch Battery management MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN Maximum ra

 ..5. Size:422K  huashuo
 fdn335n.pdf

FDN335N N-Ch 20V Fast Switching MOSFETs Product Summary Description The FDN335N is the high cell density trenched V 20 V DS N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small R 46 m DS(ON),typ power switching and load switch applications. I 3 A D The FDN335N meets the RoHS and Green Product requirement with full function reliability

 ..6. Size:399K  cn shikues
 fdn335n.pdf

FDN335N N-Channel Enhancement Mode MOSFET Feature 20V/2.0A, RDS(ON) = 80m (MAX) @VGS = 4.5V. RDS(ON) = 90m (MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered Systems. S O T - 2 3 Absolute Maximum Ratings TA

 0.1. Size:1707K  cn vbsemi
 fdn335n-nl.pdf

FDN335N-NL www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/D

 9.1. Size:73K  fairchild semi
 fdn336p-nl.pdf

January 2005 FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 1.3 A, 20 V. RDS(ON) = 0.20 @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 0.27 @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (3.6 nC typical

 9.2. Size:276K  fairchild semi
 fdn337n.pdf

March 1998 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode 2.2 A, 30 V, RDS(ON) = 0.065 @ VGS = 4.5 V power field effect transistors are produced using Fairchild's RDS(ON) = 0.082 @ VGS = 2.5 V. proprietary, high cell density, DMOS technology. This very Industry standard

 9.3. Size:89K  fairchild semi
 fdn339an.pdf

November 1999 FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 3 A, 20 V. RDS(ON) = 0.035 @ VGS = 4.5 V using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the RDS(ON) = 0.050 @ VGS = 2.5 V. on-state resistance and y

 9.4. Size:267K  fairchild semi
 fdn338p.pdf

September 2001 FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GS Fairchild s advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GS It has been optimized for battery power management applications. Fast switchi

 9.5. Size:391K  onsemi
 fdn337n.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.6. Size:66K  onsemi
 fdn336p.pdf

November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced -1.3 A, -20 V. RDS(ON) = 0.20 @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.27 @ VGS= -2.5 V. process that has been especially tailored to minimize the Low gate charge (3.6 nC typical).

 9.7. Size:321K  onsemi
 fdn338p.pdf

November 2013 FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GS Fairchild s advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GS It has been optimized for battery power management applications. Fast switching

 9.8. Size:1909K  htsemi
 fdn338p.pdf

FDN338P 20V P-Channel Enhancement Mode MOSFET VDS= -20V 115m RDS(ON), Vgs@-4.5V, Ids@-1.6A= RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.

 9.9. Size:1818K  shenzhen
 fdn338.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd FDN338 FDN338 P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SOT-23 P-Channel logic level enhancement mode -1.6 A, -20 V, RDS(ON) = 0.115 @ VGS = -4.5 V power field effect transistors are produced using Fairchild's RDS(ON) = 0.155 @ VGS = -2.5 V. proprietary, high cell density,

 9.10. Size:98K  kexin
 fdn336p.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET FDN336P Features SOT-23 Unit mm 2.9+0.1 -0.1 VDS (V) =-20V +0.1 0.4 -0.1 RDS(ON) 130m (VGS =-4.5V) 3 RDS(ON) 190m (VGS =-2.5V) 12 +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source

 9.11. Size:596K  umw-ic
 fdn338p.pdf

R UMW UMW FDN338P UMW FDN338P SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET FDN338 SOT 23 ID V(BR)DSS RDS(on)MAX 112m @-4.5V -20V A -2.8 142m @-2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET z z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit 338 Maximum ratings (Ta=25 u

 9.12. Size:498K  huashuo
 fdn338p.pdf

FDN338P P-Ch 20V Fast Switching MOSFETs Description Product Summary The FDN338P is the high cell density trenched P- VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 89 m and load switch applications. ID -3 A The FDN338P meet the RoHS and Green Product requirement with full function reliability approved.

 9.13. Size:399K  cn shikues
 fdn337n.pdf

FDN337N N-Channel Enhancement Mode MOSFET Feature 20V/3.0A, RDS(ON) = 80m (MAX) @VGS = 4.5V. RDS(ON) = 90m (MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . SOT-23 Reliable and Rugged. SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=25 Unl

 9.14. Size:1031K  cn shikues
 fdn336p.pdf

FDN336P P-Channel Enhancement Mode MOSFET Feature -20V/-2A, RDS(ON) = 120m (MAX) @VGS = -4.5V. DS(ON) GS R = 150m (MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SOT-23 for Surface Mount Package SOT-23 Applications Power Management Portable Equipment and Battery Powered Systems. A T =25 Unless Otherwise noted Ab

 9.15. Size:714K  cn shikues
 fdn338p.pdf

 9.16. Size:869K  cn vbsemi
 fdn338p-nl.pdf

FDN338P-NL www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI

 9.17. Size:1722K  cn vbsemi
 fdn337n-nl.pdf

FDN337N-NL www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

 9.18. Size:1649K  cn tech public
 fdn338p.pdf