CEM3053 Todos los transistores

 

CEM3053 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM3053

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 148 nC

Tiempo de elevación (tr): 17 nS

Conductancia de drenaje-sustrato (Cd): 1145 pF

Resistencia drenaje-fuente RDS(on): 0.007 Ohm

Empaquetado / Estuche: SO8

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CEM3053 Datasheet (PDF)

1.1. cem3053.pdf Size:385K _cet

CEM3053
CEM3053

CEM3053 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -15A, RDS(ON) = 7m? @VGS = -10V. RDS(ON) = 15m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. ESD Protected: 4000 V SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIM

5.1. cem3032.pdf Size:618K _cet

CEM3053
CEM3053

CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS(ON) = 4.8m? @VGS = 10V. RDS(ON) = 6.8m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless ot

5.2. cem3083.pdf Size:384K _cet

CEM3053
CEM3053

CEM3083 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -13A, RDS(ON) = 10m? @VGS = -10V. RDS(ON) = 15.5m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

 5.3. cem3060.pdf Size:418K _cet

CEM3053
CEM3053

CEM3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 14A, RDS(ON) = 7.8m? @VGS = 10V. RDS(ON) = 11.5m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise not

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