CEM3053 - аналоги, параметры транзистора - Справочник транзисторов

CEM3053 технические параметры

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cem3053.pdf pdf_icon

CEM3053 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -15A, RDS(ON) = 7m @VGS = -10V. RDS(ON) = 15m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. ESD Protected 4000 V SO-8 1 2 3 4 1 S S S G ABSOLUT

9.1. Size:617K cet
cem3083.pdf pdf_icon

CEM3083 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -13A, RDS(ON) = 10m @VGS = -10V. RDS(ON) = 15.5m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

9.2. Size:618K cet
cem3032.pdf pdf_icon

CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS(ON) = 4.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C un

9.3. Size:418K cet
cem3060.pdf pdf_icon

CEM3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 14A, RDS(ON) = 7.8m @VGS = 10V. RDS(ON) = 11.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw

Другие MOSFET... CEH2321A , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , 5N60 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 .