CEM3317 Todos los transistores

 

CEM3317 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM3317

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4.9(6.2) A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 6(4) nS

Conductancia de drenaje-sustrato (Cd): 250(155) pF

Resistencia drenaje-fuente RDS(on): 0.052 Ohm

Empaquetado / Estuche: SO8

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CEM3317 Datasheet (PDF)

1.1. cem3317.pdf Size:896K _cet

CEM3317
CEM3317

CEM3317 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -6.2A, RDS(ON) = 33m? @VGS = -10V. RDS(ON) = 52m? @VGS = -4.5V. -30V, -4.9A, RDS(ON) = 52m? @VGS = -10V. RDS(ON) = 85m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Pa

5.1. cem3307.pdf Size:455K _cet

CEM3317
CEM3317

CEM3307 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -6.2A, RDS(ON) = 33m? @VGS = -10V. RDS(ON) = 52m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

5.2. cem3301.pdf Size:440K _cet

CEM3317
CEM3317

CEM3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.0A, RDS(ON) = 32m? @VGS = -10V. RDS(ON) = 50m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise n

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