CEM3317 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM3317  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.9(6.2) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6(4) nS

Cossⓘ - Capacitancia de salida: 250(155) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: SO8

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CEM3317 datasheet

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cem3317.pdf pdf_icon

CEM3317

CEM3317 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. -30V, -4.9A, RDS(ON) = 52m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surfa

 9.1. Size:455K  cet
cem3307.pdf pdf_icon

CEM3317

CEM3307 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

 9.2. Size:440K  cet
cem3301.pdf pdf_icon

CEM3317

CEM3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.0A, RDS(ON) = 32m @VGS = -10V. RDS(ON) = 50m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

 9.3. Size:866K  cn vbsemi
cem3307.pdf pdf_icon

CEM3317

CEM3307 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View

Otros transistores... CEM2187, CEM2281, CEM2401, CEM2407, CEM3053, CEM3083, CEM3301, CEM3307, STP65NF06, CEM3405L, CEM3407L, CEM4201, CEM4207, CEM4301, CEM4311, CEM4435A, CEM4948