CEM6607 Todos los transistores

 

CEM6607 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEM6607
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.086 Ohm
   Paquete / Cubierta: SO8
 

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CEM6607 Datasheet (PDF)

 ..1. Size:425K  cet
 cem6607.pdf pdf_icon

CEM6607

CEM6607Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-60V, -3.8A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATI

 8.1. Size:651K  cet
 cem6600.pdf pdf_icon

CEM6607

CEM6600N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 4A, RDS(ON) = 76m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise

 8.2. Size:641K  cet
 cem6608.pdf pdf_icon

CEM6607

CEM6608Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 4A, RDS(ON) = 76m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

 8.3. Size:424K  cet
 cem6601.pdf pdf_icon

CEM6607

CEM6601P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -4A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

MOSTRAR MÁS

Otros transistores... CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A , CEM4953H , CEM6601 , IRF1405 , CEM6861 , CEM6867 , CEM8311 , CEM8435A , CEM9407A , CEM9435 , CEM9435A , CEM9953A .

History: CEB9060N | STW22NM60N | CEF06N7 | CEF10N4

 

 
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