All MOSFET. CEM6607 Datasheet

 

CEM6607 Datasheet and Replacement


   Type Designator: CEM6607
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: SO8
 

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CEM6607 Datasheet (PDF)

 ..1. Size:425K  cet
 cem6607.pdf pdf_icon

CEM6607

CEM6607Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-60V, -3.8A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATI

 8.1. Size:651K  cet
 cem6600.pdf pdf_icon

CEM6607

CEM6600N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 4A, RDS(ON) = 76m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise

 8.2. Size:641K  cet
 cem6608.pdf pdf_icon

CEM6607

CEM6608Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 4A, RDS(ON) = 76m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

 8.3. Size:424K  cet
 cem6601.pdf pdf_icon

CEM6607

CEM6601P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -4A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

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Datasheet: CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A , CEM4953H , CEM6601 , IRF1405 , CEM6861 , CEM6867 , CEM8311 , CEM8435A , CEM9407A , CEM9435 , CEM9435A , CEM9953A .

History: CED02N6G | IPD60R600PFD7S | CEF02N65G | CEB840L | IPD80P03P4L-07 | AON6532 | IPD90P04P4L-04

Keywords - CEM6607 MOSFET datasheet

 CEM6607 cross reference
 CEM6607 equivalent finder
 CEM6607 lookup
 CEM6607 substitution
 CEM6607 replacement

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