CEM9435 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEM9435
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de CEM9435 MOSFET
CEM9435 datasheet
cem9435.pdf
CEM9435 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless o
cem9436a.pdf
CEM9436A N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 6.2A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 52m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe
cem9407a.pdf
CEM9407A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -60V, -3.7A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 165m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA
Otros transistores... CEM4953H , CEM6601 , CEM6607 , CEM6861 , CEM6867 , CEM8311 , CEM8435A , CEM9407A , IRF9640 , CEM9435A , CEM9953A , CEN2301 , CEP05P03 , CEP12P10 , CEP14P20 , CEP15P15 , CEP20P06 .
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