All MOSFET. CEM9435 Datasheet

 

CEM9435 Datasheet and Replacement


   Type Designator: CEM9435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SO8
 

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CEM9435 Datasheet (PDF)

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CEM9435

CEM9435P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -5A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless o

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CEM9435

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CEM9435

CEM9436AN-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 6.2A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 52m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

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CEM9435

CEM9407APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES5-60V, -3.7A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 165m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA

Datasheet: CEM4953H , CEM6601 , CEM6607 , CEM6861 , CEM6867 , CEM8311 , CEM8435A , CEM9407A , AON7403 , CEM9435A , CEM9953A , CEN2301 , CEP05P03 , CEP12P10 , CEP14P20 , CEP15P15 , CEP20P06 .

Keywords - CEM9435 MOSFET datasheet

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