FDN340P MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDN340P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDN340P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 121 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: SUPERSOT3

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FDN340P datasheet

..1. Size:248K fairchild semi
fdn340p.pdf pdf_icon

FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V = 4.5 V DS(ON) GS using Fairchld Semiconductor advanced Power Trench i process that has been especially talored to minimize R = 110 m @ V = 2.5 V i DS(ON) GS the on-state resistance and yet maint

..2. Size:206K onsemi
fdn340p.pdf pdf_icon

September 200 February 2007 FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor advanced Power Trench R = 110 m @ V = 2.5 V DS(ON) GS process that has been especially tailored to minimize the on-sta

..3. Size:401K umw-ic
fdn340p.pdf pdf_icon

R UMW UMW FDN340P MOSFETS SOT-23 Plastic-Encapsulate P-Channel 20-V(D-S) MOSFET FDN340P V(BR)DSS RDS(on)MAX ID 70m @ -4.5V -20 V -2A 110m @ -2.5V 210m @ -1.8V FEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management SOT 23 MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN

..4. Size:330K cn shikues
fdn340p.pdf pdf_icon

FDN340P P-Channel Enhancement Mode MOSFET Feature -20V/-2A, RDS(ON) GS = 120m (MAX) @V = -4.5V. DS(ON) GS R = 150m (MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SOT-23 SOT-23 for Surface Mount Package Applications Power Management Portable Equipment and Battery Powered Systems. A T =25 Unless O

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FDN340P Todos los transistores