FDN340P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDN340P
   Código: 340
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 7.2 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 121 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: SUPERSOT3

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FDN340P Datasheet (PDF)

..1. Size:248K fairchild semi
fdn340p.pdf

FDN340PSingle P-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionFeaturesThis P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V =4.5 VDS(ON) GSusing Fairchld Semiconductor advanced Power Trench iprocess that has been especially talored to minimize R = 110 m @ V =2.5 ViDS(ON) GSthe on-state resistance and yet maint

..2. Size:206K onsemi
fdn340p.pdf

September 200February 2007FDN340PSingle P-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V =4.5 VDS(ON) GSusing Fairchild Semiconductor advanced Power Trench R = 110 m @ V =2.5 VDS(ON) GSprocess that has been especially tailored to minimize the on-sta

..3. Size:401K umw-ic
fdn340p.pdf

RUMW UMW FDN340PMOSFETSSOT-23 Plastic-Encapsulate P-Channel 20-V(D-S) MOSFETFDN340P V(BR)DSS RDS(on)MAX ID70m@ -4.5V-20 V -2A110m@ -2.5V210m@ -1.8VFEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management SOT23 MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN

..4. Size:330K cn shikues
fdn340p.pdf

FDN340PP-Channel Enhancement Mode MOSFETFeature -20V/-2A, RDS(ON) GS = 120m(MAX) @V = -4.5V.DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low RReliable and RuggedSOT-23SOT-23 for Surface Mount PackageApplications Power Management Portable Equipment and Battery Powered Systems.AT =25 Unless O

..5. Size:1610K cn tech public
fdn340p.pdf

9.1. Size:139K fairchild semi
fdn342p.pdf

August 1999FDN342PP-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in -2 A, -20 V. RDS(ON) = 0.08 @ VGS = -4.5 Va rugged gate version of Fairchild Semiconductor's RDS(ON) = 0.13 @ VGS = -2.5 V.advanced PowerTrench process. It has been optimizedfor power management applications for a wide range

Otros transistores... FDG6302P , FDG6303N , FDG6304P , FDN335N , FDN336P , FDN337N , FDN338P , FDN339AN , IPSA70R360P7S , FDN357N , FDN358P , FDN359AN , FDN360P , FDN361AN , FDP4020P , FDP4030L , FDP5680 .

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