KMB010P30QA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KMB010P30QA
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.3 nS
Cossⓘ - Capacitancia de salida: 635 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: FLP8
Búsqueda de reemplazo de KMB010P30QA MOSFET
- Selecciónⓘ de transistores por parámetros
KMB010P30QA datasheet
kmb010p30qa.pdf
SEMICONDUCTOR KMB010P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. H T D P G L FEATURES A VDSS=-30V, ID=-10A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2 B1 _
kmb014p30qa.pdf
SEMICONDUCTOR KMB014P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. H T D P G L FEATURES A VDSS=-30V, ID=-14A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2 B1 _
kmb012n40da.pdf
SEMICONDUCTOR KMB012N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and Power L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 +
kmb012n30q.pdf
SEMICONDUCTOR KMB012N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES VDSS=30V, ID=12A. A Low Drain-Source ON Resistance. DIM MILLIMETERS RDS(ON)=7m (Max.) @ VGS=10V A 5.05+0.25/-0.20 RDS(ON)=11
Otros transistores... KMA2D8P20X , KMA3D0N20SA , KMA3D6N20SA , KMA4D5P20X , KMA4D5P20XA , KMA5D8DP20Q , KMA6D5P20Q , KMA7D0NP30Q , 20N50 , KMB012N30Q , KMB012N40DA , KMB014P30QA , KMB030N30D , KMB035N40DB , KMB050N60P , KMB050N60PA , KMB054N40DA .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
hy4008 | ncep039n10m | 20n50 | 2sc869 | tip29 transistor equivalent | 2n555 | 2sa564a | c815 transistor