KMB010P30QA Datasheet. Specs and Replacement

Type Designator: KMB010P30QA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.3 nS

Cossⓘ - Output Capacitance: 635 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: FLP8

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KMB010P30QA datasheet

 ..1. Size:57K  kec
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KMB010P30QA

SEMICONDUCTOR KMB010P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. H T D P G L FEATURES A VDSS=-30V, ID=-10A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2 B1 _ ... See More ⇒

 9.1. Size:58K  kec
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KMB010P30QA

SEMICONDUCTOR KMB014P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. H T D P G L FEATURES A VDSS=-30V, ID=-14A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2 B1 _ ... See More ⇒

 9.2. Size:395K  kec
 kmb012n40da.pdf pdf_icon

KMB010P30QA

SEMICONDUCTOR KMB012N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and Power L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 +... See More ⇒

 9.3. Size:462K  kec
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KMB010P30QA

SEMICONDUCTOR KMB012N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES VDSS=30V, ID=12A. A Low Drain-Source ON Resistance. DIM MILLIMETERS RDS(ON)=7m (Max.) @ VGS=10V A 5.05+0.25/-0.20 RDS(ON)=11... See More ⇒

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Detailed specifications: KMA2D8P20X, KMA3D0N20SA, KMA3D6N20SA, KMA4D5P20X, KMA4D5P20XA, KMA5D8DP20Q, KMA6D5P20Q, KMA7D0NP30Q, IRF1405, KMB012N30Q, KMB012N40DA, KMB014P30QA, KMB030N30D, KMB035N40DB, KMB050N60P, KMB050N60PA, KMB054N40DA

Keywords - KMB010P30QA MOSFET specs

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