KMB010P30QA Specs and Replacement
Type Designator: KMB010P30QA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.3 nS
Cossⓘ - Output Capacitance: 635 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: FLP8
KMB010P30QA substitution
KMB010P30QA datasheet
kmb010p30qa.pdf
SEMICONDUCTOR KMB010P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. H T D P G L FEATURES A VDSS=-30V, ID=-10A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2 B1 _ ... See More ⇒
kmb014p30qa.pdf
SEMICONDUCTOR KMB014P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. H T D P G L FEATURES A VDSS=-30V, ID=-14A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2 B1 _ ... See More ⇒
kmb012n40da.pdf
SEMICONDUCTOR KMB012N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and Power L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 +... See More ⇒
kmb012n30q.pdf
SEMICONDUCTOR KMB012N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES VDSS=30V, ID=12A. A Low Drain-Source ON Resistance. DIM MILLIMETERS RDS(ON)=7m (Max.) @ VGS=10V A 5.05+0.25/-0.20 RDS(ON)=11... See More ⇒
Detailed specifications: KMA2D8P20X , KMA3D0N20SA , KMA3D6N20SA , KMA4D5P20X , KMA4D5P20XA , KMA5D8DP20Q , KMA6D5P20Q , KMA7D0NP30Q , 20N50 , KMB012N30Q , KMB012N40DA , KMB014P30QA , KMB030N30D , KMB035N40DB , KMB050N60P , KMB050N60PA , KMB054N40DA .
Keywords - KMB010P30QA MOSFET specs
KMB010P30QA cross reference
KMB010P30QA equivalent finder
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KMB010P30QA substitution
KMB010P30QA replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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