KMB035N40DB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KMB035N40DB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 43 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Encapsulados: DPAK
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KMB035N40DB datasheet
kmb035n40db.pdf
SEMICONDUCTOR KMB035N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A characteristics. It is mainly suitable for Back-light Inverter and Power K DIM MILLIMETERS L C D _ A 6.60 + 0.20 Supply. _ B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70
kmb035n40dc.pdf
SEMICONDUCTOR KMB035N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and power L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70
kmb035n40da.pdf
SEMICONDUCTOR KMB035N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70
kmb030n30d.pdf
SEMICONDUCTOR KMB030N30D TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. A H DIM MILLIMETERS J C D _ 6.6 0.2 A + _ B 6.1 + 0.2 _ C 5.33 + 0.1 FEATURES _ 1.08 0.2 D + _ E 2.92 + 0.3 B VDSS=30V, ID=30A. _ F 2.28 0.1
Otros transistores... KMA5D8DP20Q , KMA6D5P20Q , KMA7D0NP30Q , KMB010P30QA , KMB012N30Q , KMB012N40DA , KMB014P30QA , KMB030N30D , 2N60 , KMB050N60P , KMB050N60PA , KMB054N40DA , KMB054N40DB , KMB054N45DA , KMB060N40BA , KMB060N60FA , KMB060N60PA .
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