KMB035N40DB Specs and Replacement
Type Designator: KMB035N40DB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: DPAK
KMB035N40DB substitution
- MOSFET ⓘ Cross-Reference Search
KMB035N40DB datasheet
kmb035n40db.pdf
SEMICONDUCTOR KMB035N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A characteristics. It is mainly suitable for Back-light Inverter and Power K DIM MILLIMETERS L C D _ A 6.60 + 0.20 Supply. _ B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70 ... See More ⇒
kmb035n40dc.pdf
SEMICONDUCTOR KMB035N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and power L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 ... See More ⇒
kmb035n40da.pdf
SEMICONDUCTOR KMB035N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 ... See More ⇒
kmb030n30d.pdf
SEMICONDUCTOR KMB030N30D TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. A H DIM MILLIMETERS J C D _ 6.6 0.2 A + _ B 6.1 + 0.2 _ C 5.33 + 0.1 FEATURES _ 1.08 0.2 D + _ E 2.92 + 0.3 B VDSS=30V, ID=30A. _ F 2.28 0.1 ... See More ⇒
Detailed specifications: KMA5D8DP20Q, KMA6D5P20Q, KMA7D0NP30Q, KMB010P30QA, KMB012N30Q, KMB012N40DA, KMB014P30QA, KMB030N30D, 2N60, KMB050N60P, KMB050N60PA, KMB054N40DA, KMB054N40DB, KMB054N45DA, KMB060N40BA, KMB060N60FA, KMB060N60PA
Keywords - KMB035N40DB MOSFET specs
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History: G2309 | KMA2D4P20SA
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