KMB060N40BA Todos los transistores

SEMICONDUCTOR KMB060N40BA TECHNICAL DATA N-Ch Trench MOSFET General Description K L A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and power _ A 9.95 + 0.05 B _ B 9.2 + 0.1 Supply. D C 8.00 _ 15.3 0.2 D + P

KMB060N60PA/FA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KMB060N60PA A It s mainly suitable for low viltage applications such as automotive, O C DC/DC converters and a load switch in battery powered applications F E DIM MILLIMETERS G _ + A 9.9 0.2 B B 15.95 MAX FEATURES Q C 1.3+0.1/-0.05 _ VDSS= 60V, ID= 60A I + D 0.8 0.1