KMB3D0P30SA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KMB3D0P30SA Datasheet (PDF)

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SEMICONDUCTOR KMB3D0P30SATECHNICAL DATAP-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingEtime, low on resistance, low gate charge and excellent avalancheL B LDIM MILLIMETERScharacteristics. It is mainly suitable for portable equipment._+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30

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SEMICONDUCTOR KMB3D5N40SATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for Load switch and Back-LightL B LInverter.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/

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SEMICONDUCTOR KMB3D5PS30QATECHNICAL DATA SBD and P-Ch Trench MOSFETGENERAL DESCRIPTIONIt is particularly suited for switching such as DC/DC Converters.It is driven as low as 4.5V and fast switching, high efficiency.HTFEATURES D PG LVDSS=-30V, ID=-3.5A.Drain-Source ON Resistance.ARDS(ON)=85m (Max.) @ VGS=-10VDIM MILLIMETERSA _+RDS(ON)=180m (Max.) @ VGS=-4.5V 4.8

9.3. Size:522K kec
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SEMICONDUCTOR KMB3D9N40TATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for Load switch and Back-LightBKDIM MILLIMETERSInverter._A 2.9 + 0.2B 1.6+0.2/-0.1_C 0.70 + 0.0523_D 0.4 + 0

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