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KMB3D0P30SA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KMB3D0P30SA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 126 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.064 Ohm
   Paquete / Cubierta: SOT23
 

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KMB3D0P30SA Datasheet (PDF)

 ..1. Size:55K  kec
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KMB3D0P30SA

SEMICONDUCTOR KMB3D0P30SATECHNICAL DATAP-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingEtime, low on resistance, low gate charge and excellent avalancheL B LDIM MILLIMETERScharacteristics. It is mainly suitable for portable equipment._+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30

 9.1. Size:59K  kec
kmb3d5n40sa.pdf pdf_icon

KMB3D0P30SA

SEMICONDUCTOR KMB3D5N40SATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for Load switch and Back-LightL B LInverter.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/

 9.2. Size:465K  kec
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KMB3D0P30SA

SEMICONDUCTOR KMB3D5PS30QATECHNICAL DATA SBD and P-Ch Trench MOSFETGENERAL DESCRIPTIONIt is particularly suited for switching such as DC/DC Converters.It is driven as low as 4.5V and fast switching, high efficiency.HTFEATURES D PG LVDSS=-30V, ID=-3.5A.Drain-Source ON Resistance.ARDS(ON)=85m (Max.) @ VGS=-10VDIM MILLIMETERSA _+RDS(ON)=180m (Max.) @ VGS=-4.5V 4.8

 9.3. Size:522K  kec
kmb3d9n40ta.pdf pdf_icon

KMB3D0P30SA

SEMICONDUCTOR KMB3D9N40TATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for Load switch and Back-LightBKDIM MILLIMETERSInverter._A 2.9 + 0.2B 1.6+0.2/-0.1_C 0.70 + 0.0523_D 0.4 + 0

Otros transistores... KMB054N40DA , KMB054N40DB , KMB054N45DA , KMB060N40BA , KMB060N60FA , KMB060N60PA , KMB080N75PA , KMB2D0N60SA , IRF1405 , KMB3D5N40SA , KMB3D5PS30QA , KMB3D9N40TA , KMB4D0N30SA , KMB4D5DN60QA , KMB4D5NP55Q , KMB4D8DN55Q , KMB5D0NP40Q .

History: RCD051N20 | SIS439DNT | SK2302AA | HRLP370N10K | SI6465DQ

 

 
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