Справочник MOSFET. KMB3D0P30SA

 

KMB3D0P30SA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: KMB3D0P30SA
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 1.25 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 1 V
   Максимально допустимый постоянный ток стока |Id|: 3 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 9 ns
   Выходная емкость (Cd): 126 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.064 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для KMB3D0P30SA

 

 

KMB3D0P30SA Datasheet (PDF)

 ..1. Size:55K  kec
kmb3d0p30sa.pdf

KMB3D0P30SA
KMB3D0P30SA

SEMICONDUCTOR KMB3D0P30SATECHNICAL DATAP-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingEtime, low on resistance, low gate charge and excellent avalancheL B LDIM MILLIMETERScharacteristics. It is mainly suitable for portable equipment._+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30

 9.1. Size:59K  kec
kmb3d5n40sa.pdf

KMB3D0P30SA
KMB3D0P30SA

SEMICONDUCTOR KMB3D5N40SATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for Load switch and Back-LightL B LInverter.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/

 9.2. Size:465K  kec
kmb3d5ps30qa.pdf

KMB3D0P30SA
KMB3D0P30SA

SEMICONDUCTOR KMB3D5PS30QATECHNICAL DATA SBD and P-Ch Trench MOSFETGENERAL DESCRIPTIONIt is particularly suited for switching such as DC/DC Converters.It is driven as low as 4.5V and fast switching, high efficiency.HTFEATURES D PG LVDSS=-30V, ID=-3.5A.Drain-Source ON Resistance.ARDS(ON)=85m (Max.) @ VGS=-10VDIM MILLIMETERSA _+RDS(ON)=180m (Max.) @ VGS=-4.5V 4.8

 9.3. Size:522K  kec
kmb3d9n40ta.pdf

KMB3D0P30SA
KMB3D0P30SA

SEMICONDUCTOR KMB3D9N40TATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for Load switch and Back-LightBKDIM MILLIMETERSInverter._A 2.9 + 0.2B 1.6+0.2/-0.1_C 0.70 + 0.0523_D 0.4 + 0

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SI2343DS | SM2317PSA

 

 
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