KMB3D9N40TA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KMB3D9N40TA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   trⓘ - Tiempo de subida: 5.4 nS
   Cossⓘ - Capacitancia de salida: 78 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: TSM

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KMB3D9N40TA Datasheet (PDF)

..1. Size:522K kec
kmb3d9n40ta.pdf

SEMICONDUCTOR KMB3D9N40TATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for Load switch and Back-LightBKDIM MILLIMETERSInverter._A 2.9 + 0.2B 1.6+0.2/-0.1_C 0.70 + 0.0523_D 0.4 + 0

9.1. Size:59K kec
kmb3d5n40sa.pdf

SEMICONDUCTOR KMB3D5N40SATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for Load switch and Back-LightL B LInverter.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/

9.2. Size:55K kec
kmb3d0p30sa.pdf

SEMICONDUCTOR KMB3D0P30SATECHNICAL DATAP-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingEtime, low on resistance, low gate charge and excellent avalancheL B LDIM MILLIMETERScharacteristics. It is mainly suitable for portable equipment._+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30

9.3. Size:465K kec
kmb3d5ps30qa.pdf

SEMICONDUCTOR KMB3D5PS30QATECHNICAL DATA SBD and P-Ch Trench MOSFETGENERAL DESCRIPTIONIt is particularly suited for switching such as DC/DC Converters.It is driven as low as 4.5V and fast switching, high efficiency.HTFEATURES D PG LVDSS=-30V, ID=-3.5A.Drain-Source ON Resistance.ARDS(ON)=85m (Max.) @ VGS=-10VDIM MILLIMETERSA _+RDS(ON)=180m (Max.) @ VGS=-4.5V 4.8

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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