KMB3D9N40TA PDF and Equivalents Search

 ..1. Size:522K  kec
 kmb3d9n40ta.pdf

SEMICONDUCTOR KMB3D9N40TA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche E characteristics. It is mainly suitable for Load switch and Back-Light B K DIM MILLIMETERS Inverter. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 _ C 0.70 + 0.05 2 3 _ D 0.4 + 0... See More ⇒

 9.1. Size:59K  kec
 kmb3d5n40sa.pdf

SEMICONDUCTOR KMB3D5N40SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche E characteristics. It is mainly suitable for Load switch and Back-Light L B L Inverter. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/... See More ⇒

 9.2. Size:55K  kec
 kmb3d0p30sa.pdf

SEMICONDUCTOR KMB3D0P30SA TECHNICAL DATA P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching E time, low on resistance, low gate charge and excellent avalanche L B L DIM MILLIMETERS characteristics. It is mainly suitable for portable equipment. _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30... See More ⇒

 9.3. Size:465K  kec
 kmb3d5ps30qa.pdf

SEMICONDUCTOR KMB3D5PS30QA TECHNICAL DATA SBD and P-Ch Trench MOSFET GENERAL DESCRIPTION It is particularly suited for switching such as DC/DC Converters. It is driven as low as 4.5V and fast switching, high efficiency. H T FEATURES D P G L VDSS=-30V, ID=-3.5A. Drain-Source ON Resistance. A RDS(ON)=85m (Max.) @ VGS=-10V DIM MILLIMETERS A _ + RDS(ON)=180m (Max.) @ VGS=-4.5V 4.8... See More ⇒