KMB6D0NP40QA Todos los transistores

 

KMB6D0NP40QA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KMB6D0NP40QA

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6(5) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.9(13.2) nS

Cossⓘ - Capacitancia de salida: 160(220) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0196(0.0312) Ohm

Encapsulados: FLP8

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KMB6D0NP40QA datasheet

 ..1. Size:861K  kec
 kmb6d0np40qa.pdf pdf_icon

KMB6D0NP40QA

SEMICONDUCTOR KMB6D0NP40QA TECHNICAL DATA N and P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for Back-light Inverter. T D P G L FEATURES N-Channel A VDSS=40V, ID=6A. DIM MILLIMETERS RDS(ON)=31m (Max.) @ VGS=

 7.1. Size:407K  kec
 kmb6d0ns30qa.pdf pdf_icon

KMB6D0NP40QA

SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. The MOSFET and Schottky diode are isolated inside the T package. It is mainly suitable for portable equipment and SMPS. D P G L U A FEATURES DIM MILLI

 8.1. Size:374K  kec
 kmb6d0dn30qb.pdf pdf_icon

KMB6D0NP40QA

SEMICONDUCTOR KMB6D0DN30QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for portable equipment and DC-DC T Converter Applications. D P G L U FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS D

 8.2. Size:56K  kec
 kmb6d0dn30qa.pdf pdf_icon

KMB6D0NP40QA

SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC H T Converter Applications. D P G L FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS A _ +

MOSTRAR MÁS

Otros transistores... KMB4D0N30SA , KMB4D5DN60QA , KMB4D5NP55Q , KMB4D8DN55Q , KMB5D0NP40Q , KMB5D5NP30Q , KMB6D0DN30QA , KMB6D0DN35QA , IRFP064N , KMB6D6N30Q , KMB7D0DN40Q , KMB7D0DN40QA , KMB7D0N40QA , KMB7D0NP30Q , KMB7D0NP30QA , KMB7D1DP30QA , KMB7D6NP30Q .

 

 

 

 

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