Справочник MOSFET. KMB6D0NP40QA

 

KMB6D0NP40QA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: KMB6D0NP40QA
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6(5) A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8.9(13.2) ns
   Cossⓘ - Выходная емкость: 160(220) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0196(0.0312) Ohm
   Тип корпуса: FLP8
     - подбор MOSFET транзистора по параметрам

 

KMB6D0NP40QA Datasheet (PDF)

 ..1. Size:861K  kec
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KMB6D0NP40QA

SEMICONDUCTOR KMB6D0NP40QATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for Back-light Inverter.TD P GLFEATURES N-ChannelA: VDSS=40V, ID=6A.DIM MILLIMETERS: RDS(ON)=31m (Max.) @ VGS=

 7.1. Size:407K  kec
kmb6d0ns30qa.pdfpdf_icon

KMB6D0NP40QA

SEMICONDUCTOR KMB6D0NS30QATECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTIONThis trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. The MOSFET and Schottky diode are isolated inside theTpackage. It is mainly suitable for portable equipment and SMPS. D P GLUAFEATURES DIM MILLI

 8.1. Size:374K  kec
kmb6d0dn30qb.pdfpdf_icon

KMB6D0NP40QA

SEMICONDUCTOR KMB6D0DN30QBTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for portable equipment and DC-DCTConverter Applications. D P GLUFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSD

 8.2. Size:56K  kec
kmb6d0dn30qa.pdfpdf_icon

KMB6D0NP40QA

SEMICONDUCTOR KMB6D0DN30QATECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for portable equipment and DC-DC HTConverter Applications.D PG LFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSA _+

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

 

 
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