KMB6D6N30Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KMB6D6N30Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.1 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: FLP8

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KMB6D6N30Q Datasheet (PDF)

..1. Size:369K kec
kmb6d6n30q.pdf

SEMICONDUCTOR KMB6D6N30QTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.HTD P GLFEATURES VDSS=30V, ID=6.6A.ALow Drain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=28m (typ.) @ VGS=10VA 5.05+0.25/-0.20: RDS(ON)=

9.1. Size:374K kec
kmb6d0dn30qb.pdf

SEMICONDUCTOR KMB6D0DN30QBTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for portable equipment and DC-DCTConverter Applications. D P GLUFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSD

9.2. Size:56K kec
kmb6d0dn30qa.pdf

SEMICONDUCTOR KMB6D0DN30QATECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for portable equipment and DC-DC HTConverter Applications.D PG LFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSA _+

9.3. Size:826K kec
kmb6d0dn35qb.pdf

SEMICONDUCTOR KMB6D0DN35QBTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for DC/DC Converters.TD P GLUFEATURES AVDSS=35V, ID=6A.DIM MILLIMETERSDrain-Source ON Resistance._+A

9.4. Size:407K kec
kmb6d0ns30qa.pdf

SEMICONDUCTOR KMB6D0NS30QATECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTIONThis trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. The MOSFET and Schottky diode are isolated inside theTpackage. It is mainly suitable for portable equipment and SMPS. D P GLUAFEATURES DIM MILLI

9.5. Size:60K kec
kmb6d0dn35qa.pdf

SEMICONDUCTOR KMB6D0DN35QATECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converters. HTD PG LFEATURES AVDSS=35V, ID=6A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85 0.2

9.6. Size:861K kec
kmb6d0np40qa.pdf

SEMICONDUCTOR KMB6D0NP40QATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for Back-light Inverter.TD P GLFEATURES N-ChannelA: VDSS=40V, ID=6A.DIM MILLIMETERS: RDS(ON)=31m (Max.) @ VGS=

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