KMB6D6N30Q
MOSFET. Datasheet pdf. Equivalent
Type Designator: KMB6D6N30Q
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 6.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.1
nC
trⓘ - Rise Time: 4.1
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package:
FLP8
KMB6D6N30Q
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KMB6D6N30Q
Datasheet (PDF)
..1. Size:369K kec
kmb6d6n30q.pdf 
SEMICONDUCTOR KMB6D6N30QTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.HTD P GLFEATURES VDSS=30V, ID=6.6A.ALow Drain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=28m (typ.) @ VGS=10VA 5.05+0.25/-0.20: RDS(ON)=
9.1. Size:374K kec
kmb6d0dn30qb.pdf
SEMICONDUCTOR KMB6D0DN30QBTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for portable equipment and DC-DCTConverter Applications. D P GLUFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSD
9.2. Size:56K kec
kmb6d0dn30qa.pdf
SEMICONDUCTOR KMB6D0DN30QATECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for portable equipment and DC-DC HTConverter Applications.D PG LFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSA _+
9.3. Size:826K kec
kmb6d0dn35qb.pdf
SEMICONDUCTOR KMB6D0DN35QBTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for DC/DC Converters.TD P GLUFEATURES AVDSS=35V, ID=6A.DIM MILLIMETERSDrain-Source ON Resistance._+A
9.4. Size:407K kec
kmb6d0ns30qa.pdf
SEMICONDUCTOR KMB6D0NS30QATECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTIONThis trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. The MOSFET and Schottky diode are isolated inside theTpackage. It is mainly suitable for portable equipment and SMPS. D P GLUAFEATURES DIM MILLI
9.5. Size:60K kec
kmb6d0dn35qa.pdf
SEMICONDUCTOR KMB6D0DN35QATECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converters. HTD PG LFEATURES AVDSS=35V, ID=6A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85 0.2
9.6. Size:861K kec
kmb6d0np40qa.pdf
SEMICONDUCTOR KMB6D0NP40QATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for Back-light Inverter.TD P GLFEATURES N-ChannelA: VDSS=40V, ID=6A.DIM MILLIMETERS: RDS(ON)=31m (Max.) @ VGS=
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