KMB6D6N30Q MOSFET Datasheet: N-Ch, 30V, 6.6A. Full specification with pinout and replacement list

KMB6D6N30Q Specs and Replacement

Type Designator: KMB6D6N30Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.1 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: FLP8

KMB6D6N30Q substitution

- MOSFET ⓘ Cross-Reference Search

KMB6D6N30Q datasheet

..1. Size:369K kec
kmb6d6n30q.pdf pdf_icon

SEMICONDUCTOR KMB6D6N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES VDSS=30V, ID=6.6A. A Low Drain-Source ON Resistance. DIM MILLIMETERS RDS(ON)=28m (typ.) @ VGS=10V A 5.05+0.25/-0.20 RDS(ON)=... See More ⇒

9.1. Size:374K kec
kmb6d0dn30qb.pdf pdf_icon

SEMICONDUCTOR KMB6D0DN30QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for portable equipment and DC-DC T Converter Applications. D P G L U FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS D... See More ⇒

9.2. Size:56K kec
kmb6d0dn30qa.pdf pdf_icon

SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC H T Converter Applications. D P G L FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS A _ + ... See More ⇒

9.3. Size:826K kec
kmb6d0dn35qb.pdf pdf_icon

SEMICONDUCTOR KMB6D0DN35QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for DC/DC Converters. T D P G L U FEATURES A VDSS=35V, ID=6A. DIM MILLIMETERS Drain-Source ON Resistance. _ + A... See More ⇒