KMB7D0DN40QA Todos los transistores

 

KMB7D0DN40QA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KMB7D0DN40QA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.6 nS
   Cossⓘ - Capacitancia de salida: 201 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: FLP8
     - Selección de transistores por parámetros

 

KMB7D0DN40QA Datasheet (PDF)

 ..1. Size:81K  kec
kmb7d0dn40qa.pdf pdf_icon

KMB7D0DN40QA

SEMICONDUCTOR KMB7D0DN40QATECHNICAL DATA Dual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for power management in PC, portable HTequipment and battery powered systems.D PG LAFEATURES DIM MILLIMETERSA _VDS

 3.1. Size:461K  kec
kmb7d0dn40q.pdf pdf_icon

KMB7D0DN40QA

SEMICONDUCTOR KMB7D0DN40QTECHNICAL DATA Dual N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AVDSS=40V, ID=7A.DIM MILLIMETERSLow Drain-Source ON Resistance.A 5.05+0.25/-0.20: RDS(ON)=25m (Max.) @ VGS=10V _3.90

 3.2. Size:833K  kec
kmb7d0dn40qb.pdf pdf_icon

KMB7D0DN40QA

SEMICONDUCTOR KMB7D0DN40QBTECHNICAL DATA Dual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for power management in PC, portableTequipment and battery powered systems. D P GLUAFEATURES DIM MILLIMETERSVDS

 8.1. Size:370K  kec
kmb7d0n40qa.pdf pdf_icon

KMB7D0DN40QA

SEMICONDUCTOR KMB7D0N40QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for power management in pc, portable HTequipment and battery powered systems.D PG LAFEATURES DIM MILLIMETERSA _+VDSS=4

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CS1N65A3 | SMP40N10 | AP55T06GS-HF | DMC2041UFDB | 2SK3224 | IXFN64N60P | IRF624A

 

 
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