KMB7D0DN40QA. Аналоги и основные параметры
Наименование производителя: KMB7D0DN40QA
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.6 ns
Cossⓘ - Выходная емкость: 201 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: FLP8
Аналог (замена) для KMB7D0DN40QA
- подборⓘ MOSFET транзистора по параметрам
KMB7D0DN40QA даташит
kmb7d0dn40qa.pdf
SEMICONDUCTOR KMB7D0DN40QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in PC, portable H T equipment and battery powered systems. D P G L A FEATURES DIM MILLIMETERS A _ VDS
kmb7d0dn40q.pdf
SEMICONDUCTOR KMB7D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A VDSS=40V, ID=7A. DIM MILLIMETERS Low Drain-Source ON Resistance. A 5.05+0.25/-0.20 RDS(ON)=25m (Max.) @ VGS=10V _ 3.90
kmb7d0dn40qb.pdf
SEMICONDUCTOR KMB7D0DN40QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for power management in PC, portable T equipment and battery powered systems. D P G L U A FEATURES DIM MILLIMETERS VDS
kmb7d0n40qa.pdf
SEMICONDUCTOR KMB7D0N40QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in pc, portable H T equipment and battery powered systems. D P G L A FEATURES DIM MILLIMETERS A _ + VDSS=4
Другие MOSFET... KMB4D8DN55Q , KMB5D0NP40Q , KMB5D5NP30Q , KMB6D0DN30QA , KMB6D0DN35QA , KMB6D0NP40QA , KMB6D6N30Q , KMB7D0DN40Q , IRFZ44N , KMB7D0N40QA , KMB7D0NP30Q , KMB7D0NP30QA , KMB7D1DP30QA , KMB7D6NP30Q , KMB8D0P30Q , KMB8D2N60QA , KMC7D0CN20C .
History: MTN8N65FI
History: MTN8N65FI
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Список транзисторов
Обновления
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