KMB7D1DP30QA Todos los transistores

 ..1. Size:65K  kec
 kmb7d1dp30qa.pdf

SEMICONDUCTOR KMB7D1DP30QA TECHNICAL DATA Dual P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and Load H T Switch. D P G L FEATURES A DIM MILLIMETERS VDSS=-30V, ID=-7.1A A _ 4.85 0.2 + B1 _

 9.1. Size:370K  kec
 kmb7d0n40qa.pdf

SEMICONDUCTOR KMB7D0N40QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in pc, portable H T equipment and battery powered systems. D P G L A FEATURES DIM MILLIMETERS A _ + VDSS=4

 9.2. Size:388K  kec
 kmb7d6np30q.pdf

SEMICONDUCTOR KMB7D6NP30Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A N-Channel DIM MILLIMETERS VDSS=30V, ID=7.6A. A 5.05+0.25/-0.20 RDS(ON)=20m (Max.) @ VGS=10V _ 3.90 + 0.3 B1 8 5

 9.3. Size:461K  kec
 kmb7d0dn40q.pdf

SEMICONDUCTOR KMB7D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A VDSS=40V, ID=7A. DIM MILLIMETERS Low Drain-Source ON Resistance. A 5.05+0.25/-0.20 RDS(ON)=25m (Max.) @ VGS=10V _ 3.90

 9.4. Size:81K  kec
 kmb7d0dn40qa.pdf

SEMICONDUCTOR KMB7D0DN40QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in PC, portable H T equipment and battery powered systems. D P G L A FEATURES DIM MILLIMETERS A _ VDS

 9.5. Size:88K  kec
 kmb7d0np30qa.pdf

SEMICONDUCTOR KMB7D0NP30QA TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for Back-light Inverter. H T D P G L FEATURES N-Channel A VDSS=30V, ID=7A. DIM MILLIMETERS A _ + RDS(ON)=23.5m (Max.) @ VGS=10V 4.85 0.2 B1 _ 3.94 + 0.2 RDS(ON)=39m (Max.) @ VGS=4.5V B2 _ 6.02+ 0.3 8 5 D _

 9.6. Size:393K  kec
 kmb7d0np30q.pdf

SEMICONDUCTOR KMB7D0NP30Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A N-Channel DIM MILLIMETERS VDSS=30V, ID=7A. A 5.05+0.25/-0.20 RDS(ON)=25m (Max.) @ VGS=10V _ 3.90 + 0.3 B1 8 5 _

 9.7. Size:833K  kec
 kmb7d0dn40qb.pdf

SEMICONDUCTOR KMB7D0DN40QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for power management in PC, portable T equipment and battery powered systems. D P G L U A FEATURES DIM MILLIMETERS VDS