KMB7D1DP30QA - описание и поиск аналогов

SEMICONDUCTOR KMB7D1DP30QA TECHNICAL DATA Dual P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and Load H T Switch. D P G L FEATURES A DIM MILLIMETERS VDSS=-30V, ID=-7.1A A _ 4.85 0.2 + B1 _

SEMICONDUCTOR KMB7D0N40QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in pc, portable H T equipment and battery powered systems. D P G L A FEATURES DIM MILLIMETERS A _ + VDSS=4

SEMICONDUCTOR KMB7D6NP30Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A N-Channel DIM MILLIMETERS VDSS=30V, ID=7.6A. A 5.05+0.25/-0.20 RDS(ON)=20m (Max.) @ VGS=10V _ 3.90 + 0.3 B1 8 5

SEMICONDUCTOR KMB7D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A VDSS=40V, ID=7A. DIM MILLIMETERS Low Drain-Source ON Resistance. A 5.05+0.25/-0.20 RDS(ON)=25m (Max.) @ VGS=10V _ 3.90

SEMICONDUCTOR KMB7D0DN40QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in PC, portable H T equipment and battery powered systems. D P G L A FEATURES DIM MILLIMETERS A _ VDS

SEMICONDUCTOR KMB7D0NP30QA TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for Back-light Inverter. H T D P G L FEATURES N-Channel A VDSS=30V, ID=7A. DIM MILLIMETERS A _ + RDS(ON)=23.5m (Max.) @ VGS=10V 4.85 0.2 B1 _ 3.94 + 0.2 RDS(ON)=39m (Max.) @ VGS=4.5V B2 _ 6.02+ 0.3 8 5 D _

SEMICONDUCTOR KMB7D0NP30Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A N-Channel DIM MILLIMETERS VDSS=30V, ID=7A. A 5.05+0.25/-0.20 RDS(ON)=25m (Max.) @ VGS=10V _ 3.90 + 0.3 B1 8 5 _

SEMICONDUCTOR KMB7D0DN40QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for power management in PC, portable T equipment and battery powered systems. D P G L U A FEATURES DIM MILLIMETERS VDS