KMB8D0P30Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KMB8D0P30Q
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.4 nS
Cossⓘ - Capacitancia de salida: 362 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: FLP8
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KMB8D0P30Q datasheet
kmb8d0p30q.pdf
SEMICONDUCTOR KMB8D0P30Q TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for battery power management in cell phone, PDA and notebook H T D P G L FEATURES VDSS=-30V, ID=-8A. A Low Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V DIM MILLIMETERS A 5.05+0.25/-0.20 RDS(ON)=35m (Max.) @ VGS=-4.5V _ 3.90 + 0.3 B1 8 Super High Dense Cell
kmb8d0p30qa.pdf
SEMICONDUCTOR KMB8D0P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for Load Switch and Battery pack. T D P G L U FEATURES A VDSS=-30V, ID=-8A. DIM MILLIMETERS Drain to Source On Resistanc
kmb8d2n60qa.pdf
SEMICONDUCTOR KMB8D2N60QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Back-light Inverter. H T D P G L FEATURES VDSS=60V, ID=8.2A. A Drain-Source ON Resistance. DIM MILLIMETERS A _ + RDS(ON)=
Otros transistores... KMB6D6N30Q , KMB7D0DN40Q , KMB7D0DN40QA , KMB7D0N40QA , KMB7D0NP30Q , KMB7D0NP30QA , KMB7D1DP30QA , KMB7D6NP30Q , IRF540 , KMB8D2N60QA , KMC7D0CN20C , KMC7D0CN20CA , KML0D6NP20EA , KF13N60N , KF15N50N , KF17N50N , KF50N06P .
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