KMB8D0P30Q MOSFET. Datasheet pdf. Equivalent
Type Designator: KMB8D0P30Q
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17.3 nC
trⓘ - Rise Time: 17.4 nS
Cossⓘ - Output Capacitance: 362 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: FLP8
KMB8D0P30Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KMB8D0P30Q Datasheet (PDF)
kmb8d0p30q.pdf
SEMICONDUCTOR KMB8D0P30QTECHNICAL DATAP-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for battery power management in cell phone,PDA and notebookHTD P GLFEATURES VDSS=-30V, ID=-8A.ALow Drain-Source ON Resistance.: RDS(ON)=20m (Max.) @ VGS=-10VDIM MILLIMETERSA 5.05+0.25/-0.20: RDS(ON)=35m (Max.) @ VGS=-4.5V_3.90 + 0.3B18Super High Dense Cell
kmb8d0p30qa.pdf
SEMICONDUCTOR KMB8D0P30QATECHNICAL DATA P-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for Load Switch and Battery pack.TD P GLUFEATURES AVDSS=-30V, ID=-8A.DIM MILLIMETERSDrain to Source On Resistanc
kmb8d2n60qa.pdf
SEMICONDUCTOR KMB8D2N60QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for Back-light Inverter. HTD PG LFEATURES VDSS=60V, ID=8.2A.ADrain-Source ON Resistance.DIM MILLIMETERSA _+RDS(ON)=
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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