KTK920T Todos los transistores

 

KTK920T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KTK920T
   Código: MA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 3 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 7 V
   |Id|ⓘ - Corriente continua de drenaje: 0.01 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 20 Ohm
   Paquete / Cubierta: TSQ

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KTK920T Datasheet (PDF)

 ..1. Size:446K  kec
ktk920t.pdf

KTK920T
KTK920T

KTK920TSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORRF Switching for VCR TunerFEATURESELow loss at on state(Typ 1dB@1GHz)BDIM MILLIMETERSWith built-in bias diode_A 2.9 + 0.214B 1.6+0.2/-0.1_C 0.70 + 0.05_D 0.4 + 0.1E 2.8+0.2/-0.3_+F 1.9 0.232_G 0.16 + 0.05H 0.00-0.10I0.25+0.3/-0.15_J 0.60 + 0.1_0.55K + 0.1

 8.1. Size:447K  kec
ktk920bt.pdf

KTK920T
KTK920T

KTK920BTSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORRF Switching for VCR TunerFEATURESELow loss at on state(Typ 1dB@1GHz)BDIM MILLIMETERSWith built-in bias diode_A 2.9 + 0.214B 1.6+0.2/-0.1_C 0.70 + 0.05_D 0.4 + 0.1E 2.8+0.2/-0.3_+F 1.9 0.232_G 0.16 + 0.05H 0.00-0.10I0.25+0.3/-0.15_J 0.60 + 0.1_0.55K + 0.1

 8.2. Size:35K  kec
ktk920u.pdf

KTK920T
KTK920T

KTK920USEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORRF Switching for VCR/DVD/Set Top Box TunerFEATURESELow loss at on state(Typ 1dB@1GHz)M B MWith built-in bias diodeDIM MILLIMETERS1 4 D_A 2.00 + 0.20_B 1.25 + 0.15_C 0.90 + 0.102 3D 0.3+0.10/-0.05_E 2.10 + 0.20H 0.15+0.1/-0.061.30J0.00 ~ 0.10KH L 0.70M 0.42N N0.10 M

 8.3. Size:35K  kec
ktk920bu.pdf

KTK920T
KTK920T

KTK920BUSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORRF Switching for VCR TunerFEATURESELow loss at on state(Typ 1dB@1GHz)M B MWith built-in bias diodeDIM MILLIMETERS1 4 D_A 2.00 + 0.20_B 1.25 + 0.15_C 0.90 + 0.102 3D 0.3+0.10/-0.05_E 2.10 + 0.20H 0.15+0.1/-0.061.30J0.00 ~ 0.10KH L 0.70M 0.42N N0.10 MINNK1. FE

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History: NP80N03MLE

 

 
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History: NP80N03MLE

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