KTK920T Todos los transistores

 

KTK920T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTK920T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 3 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 7 V

|Id|ⓘ - Corriente continua de drenaje: 0.01 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 20 Ohm

Encapsulados: TSQ

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KTK920T datasheet

 ..1. Size:446K  kec
 ktk920t.pdf pdf_icon

KTK920T

KTK920T SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state(Typ 1dB@1GHz) B DIM MILLIMETERS With built-in bias diode _ A 2.9 + 0.2 14 B 1.6+0.2/-0.1 _ C 0.70 + 0.05 _ D 0.4 + 0.1 E 2.8+0.2/-0.3 _ + F 1.9 0.2 3 2 _ G 0.16 + 0.05 H 0.00-0.10 I 0.25+0.3/-0.15 _ J 0.60 + 0.1 _ 0.55 K + 0.1

 8.1. Size:447K  kec
 ktk920bt.pdf pdf_icon

KTK920T

KTK920BT SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state(Typ 1dB@1GHz) B DIM MILLIMETERS With built-in bias diode _ A 2.9 + 0.2 14 B 1.6+0.2/-0.1 _ C 0.70 + 0.05 _ D 0.4 + 0.1 E 2.8+0.2/-0.3 _ + F 1.9 0.2 3 2 _ G 0.16 + 0.05 H 0.00-0.10 I 0.25+0.3/-0.15 _ J 0.60 + 0.1 _ 0.55 K + 0.1

 8.2. Size:35K  kec
 ktk920u.pdf pdf_icon

KTK920T

KTK920U SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR RF Switching for VCR/DVD/Set Top Box Tuner FEATURES E Low loss at on state(Typ 1dB@1GHz) M B M With built-in bias diode DIM MILLIMETERS 1 4 D _ A 2.00 + 0.20 _ B 1.25 + 0.15 _ C 0.90 + 0.10 2 3 D 0.3+0.10/-0.05 _ E 2.10 + 0.20 H 0.15+0.1/-0.06 1.30 J 0.00 0.10 K H L 0.70 M 0.42 N N 0.10 M

 8.3. Size:35K  kec
 ktk920bu.pdf pdf_icon

KTK920T

KTK920BU SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state(Typ 1dB@1GHz) M B M With built-in bias diode DIM MILLIMETERS 1 4 D _ A 2.00 + 0.20 _ B 1.25 + 0.15 _ C 0.90 + 0.10 2 3 D 0.3+0.10/-0.05 _ E 2.10 + 0.20 H 0.15+0.1/-0.06 1.30 J 0.00 0.10 K H L 0.70 M 0.42 N N 0.10 MIN N K 1. FE

MOSTRAR MÁS

Otros transistores... KML0D6NP20EA , KF13N60N , KF15N50N , KF17N50N , KF50N06P , KTK919S , KTK920BT , KTK920BU , IRF3710 , KTK920U , KMB035N40DA , KMB6D0DN30QB , KMB6D0NS30QA , KMB7D0DN40QB , KMD6D0DN30QA , KMD6D0DN40Q , KMD7D5P40QA .

History: P0420AI

 

 

 

 

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