KTK920T MOSFET Datasheet: N-Ch, 3V, 0.01A. Full specification with pinout and replacement list

KTK920T Specs and Replacement

Type Designator: KTK920T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 3 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V

|Id| ⓘ - Maximum Drain Current: 0.01 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm

Package: TSQ

KTK920T substitution

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KTK920T datasheet

..1. Size:446K kec
ktk920t.pdf pdf_icon

KTK920T SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state(Typ 1dB@1GHz) B DIM MILLIMETERS With built-in bias diode _ A 2.9 + 0.2 14 B 1.6+0.2/-0.1 _ C 0.70 + 0.05 _ D 0.4 + 0.1 E 2.8+0.2/-0.3 _ + F 1.9 0.2 3 2 _ G 0.16 + 0.05 H 0.00-0.10 I 0.25+0.3/-0.15 _ J 0.60 + 0.1 _ 0.55 K + 0.1 ... See More ⇒

8.1. Size:447K kec
ktk920bt.pdf pdf_icon

KTK920BT SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state(Typ 1dB@1GHz) B DIM MILLIMETERS With built-in bias diode _ A 2.9 + 0.2 14 B 1.6+0.2/-0.1 _ C 0.70 + 0.05 _ D 0.4 + 0.1 E 2.8+0.2/-0.3 _ + F 1.9 0.2 3 2 _ G 0.16 + 0.05 H 0.00-0.10 I 0.25+0.3/-0.15 _ J 0.60 + 0.1 _ 0.55 K + 0.1 ... See More ⇒

8.2. Size:35K kec
ktk920u.pdf pdf_icon

KTK920U SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR RF Switching for VCR/DVD/Set Top Box Tuner FEATURES E Low loss at on state(Typ 1dB@1GHz) M B M With built-in bias diode DIM MILLIMETERS 1 4 D _ A 2.00 + 0.20 _ B 1.25 + 0.15 _ C 0.90 + 0.10 2 3 D 0.3+0.10/-0.05 _ E 2.10 + 0.20 H 0.15+0.1/-0.06 1.30 J 0.00 0.10 K H L 0.70 M 0.42 N N 0.10 M... See More ⇒

8.3. Size:35K kec
ktk920bu.pdf pdf_icon

KTK920BU SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state(Typ 1dB@1GHz) M B M With built-in bias diode DIM MILLIMETERS 1 4 D _ A 2.00 + 0.20 _ B 1.25 + 0.15 _ C 0.90 + 0.10 2 3 D 0.3+0.10/-0.05 _ E 2.10 + 0.20 H 0.15+0.1/-0.06 1.30 J 0.00 0.10 K H L 0.70 M 0.42 N N 0.10 MIN N K 1. FE... See More ⇒

Detailed specifications: KML0D6NP20EA, KF13N60N, KF15N50N, KF17N50N, KF50N06P, KTK919S, KTK920BT, KTK920BU, IRF3710, KTK920U, KMB035N40DA, KMB6D0DN30QB, KMB6D0NS30QA, KMB7D0DN40QB, KMD6D0DN30QA, KMD6D0DN40Q, KMD7D5P40QA