KML0D4N20V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KML0D4N20V Datasheet (PDF)

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SEMICONDUCTOR KML0D4N20VTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionIts mainly suitable for Load Switching Cell Phones, Battery PoweredSystems and Level-Shifter.EBDIM MILLIMETERS2FEATURES _A 1.2 +0.05_B 0.8 +0.05VDSS=20V, ID=0.4A13_C 0.5 + 0.05Drain-Soure ON Resistance _D 0.3 + 0.05_E 1.2 + 0.05: RDS(ON)=0.70 @ VGS=4.5V_G 0.8 +

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SEMICONDUCTOR KML0D4N20ETECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for Load Switching Mobile Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS=20V, ID=0.4ADrain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V: RDS(ON)=0.85 @ VGS=2.5V: RDS(ON)=1.25 @ VGS=1.8VSuper High Dense Cell DesignMAXIMUM RATING (Ta=25)CHAR

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SEMICONDUCTOR KML0D4N20TVTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for Load Switching Cell Phones, Battery PoweredESystems and Level-Shifter.B2DIM MILLIMETERSFEATURES _1 A 1.2 +0.053_B 0.8 +0.05VDSS=20V, ID=0.4AC 0.34 MaxDrain-Soure ON Resistance _D 0.3 + 0.05_E 1.2 + 0.05: RDS(ON)=0.70 @ VGS=4.5V_F 0.8 + 0.05

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SEMICONDUCTOR KML0D4P20ETECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIt s Mainly Suitable for Load Switching Mobile Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS= -20V, ID= -0.35ADrain-Soure ON Resistance : RDS(ON)=1.2 @ VGS= -4.5V: RDS(ON)=1.6 @ VGS= -2.5V: RDS(ON)=2.7 @ VGS= -1.8VESD Protection diode.MAXIMUM RATING (Ta=25)CHA

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