KML0D4N20V - аналоги, параметры транзистора - Справочник транзисторов

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..1. Size:377K kec
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SEMICONDUCTOR KML0D4N20V TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. E B DIM MILLIMETERS 2 FEATURES _ A 1.2 +0.05 _ B 0.8 +0.05 VDSS=20V, ID=0.4A 1 3 _ C 0.5 + 0.05 Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 RDS(ON)=0.70 @ VGS=4.5V _ G 0.8 +

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SEMICONDUCTOR KML0D4N20E TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance RDS(ON)=0.70 @ VGS=4.5V RDS(ON)=0.85 @ VGS=2.5V RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design MAXIMUM RATING (Ta=25 ) CHAR

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SEMICONDUCTOR KML0D4N20TV TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered E Systems and Level-Shifter. B 2 DIM MILLIMETERS FEATURES _ 1 A 1.2 +0.05 3 _ B 0.8 +0.05 VDSS=20V, ID=0.4A C 0.34 Max Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 RDS(ON)=0.70 @ VGS=4.5V _ F 0.8 + 0.05

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SEMICONDUCTOR KML0D4P20E TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS= -20V, ID= -0.35A Drain-Soure ON Resistance RDS(ON)=1.2 @ VGS= -4.5V RDS(ON)=1.6 @ VGS= -2.5V RDS(ON)=2.7 @ VGS= -1.8V ESD Protection diode. MAXIMUM RATING (Ta=25 ) CHA

Другие MOSFET... KMB6D0DN30QB , KMB6D0NS30QA , KMB7D0DN40QB , KMD6D0DN30QA , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , AON7408 , KU035N06P , KU047N08P , KU086N10F , KU086N10P , KU310N10D , KU310N10P , KF10N60F , KF10N60P .