KF16N50F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF16N50F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 51 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 244 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Encapsulados: TO220IS
Búsqueda de reemplazo de KF16N50F MOSFET
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KF16N50F datasheet
kf16n50f.pdf
KF16N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF16N50P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power supp
kf16n25d.pdf
KF16N25D SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for DC/DC Converters L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 and switching mode power
kf16n25f.pdf
KF16N25F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters E DIM MILLIMETERS _ A 10.16 0.2 + and switching mode power supplies. _ B 15.8
Otros transistores... KF10N68F , KF11N50F , KF11N50P , KF12N60F , KF12N60P , KF12N68F , KF13N50F , KF13N50P , 5N65 , KF1N60D , KF1N60I , KF1N60L , KF2N60D , KF2N60F , KF2N60I , KF2N60L , KF2N60P .
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