KF4N65F Todos los transistores

 

KF4N65F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KF4N65F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm

Encapsulados: TO220IS

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KF4N65F datasheet

 0.1. Size:382K  kec
kf4n65fm.pdf pdf_icon

KF4N65F

KF4N65FM SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli

 8.1. Size:414K  kec
kf4n65p f.pdf pdf_icon

KF4N65F

KF4N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power suppli

 9.1. Size:385K  kec
kf4n60d.pdf pdf_icon

KF4N65F

KF4N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode power supp

 9.2. Size:382K  kec
kf4n60f.pdf pdf_icon

KF4N65F

KF4N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS switching mode power supplies. _ A 10.16 0.2 + _ B 15.8

Otros transistores... KF3N60D , KF3N60F , KF3N60I , KF3N60P , KF3N80F , KF4N20LD , KF4N20LI , KF4N20LW , IRF2807 , KF4N65P , KF4N80F , KF5N50D , KF5N50DS , KF5N50DZ , KF5N50F , KF5N50FS , KF5N50FSA .

History: TPC8406-H

 

 

 

 

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