KF4N65F. Аналоги и основные параметры
Наименование производителя: KF4N65F
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 37.9 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 60 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.1 Ohm
Тип корпуса: TO220IS
Аналог (замена) для KF4N65F
- подборⓘ MOSFET транзистора по параметрам
KF4N65F даташит
kf4n65fm.pdf
KF4N65FM SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli
kf4n65p f.pdf
KF4N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power suppli
kf4n60d.pdf
KF4N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode power supp
kf4n60f.pdf
KF4N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS switching mode power supplies. _ A 10.16 0.2 + _ B 15.8
Другие MOSFET... KF3N60D , KF3N60F , KF3N60I , KF3N60P , KF3N80F , KF4N20LD , KF4N20LI , KF4N20LW , IRF2807 , KF4N65P , KF4N80F , KF5N50D , KF5N50DS , KF5N50DZ , KF5N50F , KF5N50FS , KF5N50FSA .
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Список транзисторов
Обновления
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