FDP7045L Todos los transistores

 

FDP7045L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP7045L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 107 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 41 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 1092 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

FDP7045L Datasheet (PDF)

 ..1. Size:109K  fairchild semi
fdp7045l fdb7045l.pdf pdf_icon

FDP7045L

March 2004FDP7045L/FDB7045LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 100 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 6.0 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC elec

 9.1. Size:412K  fairchild semi
fdp7030bl fdb7030bl.pdf pdf_icon

FDP7045L

July 1998 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed60 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, specifically to improve the overall efficiency of DC/DCRDS(ON) = 0.0120 @ VGS = 4.5 V.converters using either synchronous or conventional Critical DC electrical parameters spec

 9.2. Size:385K  fairchild semi
fdp7030l.pdf pdf_icon

FDP7045L

April 1998 FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 100 A, 30 V. RDS(ON) = 0.007 @ VGS=10 VRDS(ON) = 0.010 @ VGS=5 V.effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high densityCritical

 9.3. Size:112K  fairchild semi
fdp7030bl fdb7030bl .pdf pdf_icon

FDP7045L

October 2003FDP7030BL/FDB7030BLN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 60 A, 30 V RDS(ON) = 9 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 12 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC elec

Otros transistores... FDP6030BL , FDP6030L , FDP6035AL , FDP6035L , FDP603AL , FDP6670AL , FDP7030BL , FDP7030L , IRFP460 , FDP8030L , FDR4410 , FDR4420A , FDR8305N , FDR8308P , FDR836P , FDR838P , FDR8508P .

History: ELM14812AA

 

 
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