FDP7045L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDP7045L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 107 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 41 nC
trⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 1092 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO220
FDP7045L Datasheet (PDF)
fdp7045l fdb7045l.pdf
March 2004FDP7045L/FDB7045LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 100 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 6.0 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC elec
fdp7030bl fdb7030bl.pdf
July 1998 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed60 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, specifically to improve the overall efficiency of DC/DCRDS(ON) = 0.0120 @ VGS = 4.5 V.converters using either synchronous or conventional Critical DC electrical parameters spec
fdp7030l.pdf
April 1998 FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 100 A, 30 V. RDS(ON) = 0.007 @ VGS=10 VRDS(ON) = 0.010 @ VGS=5 V.effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high densityCritical
fdp7030bl fdb7030bl .pdf
October 2003FDP7030BL/FDB7030BLN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 60 A, 30 V RDS(ON) = 9 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 12 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC elec
fdp7030bl fdb7030bl.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие MOSFET... FDP6030BL , FDP6030L , FDP6035AL , FDP6035L , FDP603AL , FDP6670AL , FDP7030BL , FDP7030L , IRFP460 , FDP8030L , FDR4410 , FDR4420A , FDR8305N , FDR8308P , FDR836P , FDR838P , FDR8508P .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918