FDP7045L. Аналоги и основные параметры
Наименование производителя: FDP7045L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 107 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 1092 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO220
Аналог (замена) для FDP7045L
- подборⓘ MOSFET транзистора по параметрам
FDP7045L даташит
fdp7045l fdb7045l.pdf
March 2004 FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 100 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 6.0 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC elec
fdp7030bl fdb7030bl.pdf
July 1998 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 60 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0120 @ VGS = 4.5 V. converters using either synchronous or conventional Critical DC electrical parameters spec
fdp7030l.pdf
April 1998 FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 100 A, 30 V. RDS(ON) = 0.007 @ VGS=10 V RDS(ON) = 0.010 @ VGS=5 V. effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density Critical
fdp7030bl fdb7030bl .pdf
October 2003 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 60 A, 30 V RDS(ON) = 9 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 12 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC elec
Другие IGBT... FDP6030BL, FDP6030L, FDP6035AL, FDP6035L, FDP603AL, FDP6670AL, FDP7030BL, FDP7030L, IRFP460, FDP8030L, FDR4410, FDR4420A, FDR8305N, FDR8308P, FDR836P, FDR838P, FDR8508P
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Список транзисторов
Обновления
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