KF5N53FS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF5N53FS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 525 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 71 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm
Encapsulados: TO220IS
Búsqueda de reemplazo de KF5N53FS MOSFET
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KF5N53FS datasheet
kf5n53fs.pdf
KF5N53FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 525V
kf5n53f.pdf
KF5N53F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 525V,
kf5n53dz ds.pdf
KF5N53DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic
kf5n53d i.pdf
KF5N53D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N53D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 ele
Otros transistores... KF5N50FSA , KF5N50FZ , KF5N50FZA , KF5N50IZ , KF5N50PZ , KF5N53D , KF5N53DS , KF5N53F , IRF9640 , KF5N60D , KF5N60F , KF5N60FZ , KF5N60I , KF5N60P , KF5N65D , KF5N65F , KF6N60D .
History: MTM76520
History: MTM76520
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