KF5N53FS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: KF5N53FS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 37.9 W
Предельно допустимое напряжение сток-исток |Uds|: 525 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 12 nC
Время нарастания (tr): 29 ns
Выходная емкость (Cd): 71 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.25 Ohm
Тип корпуса: TO220IS
KF5N53FS Datasheet (PDF)
kf5n53fs.pdf
KF5N53FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gatecharge and excellent avalanche characteristics. It is mainly suitable forelectronic ballast and switching mode power supplies.FEATURES VDSS= 525V
kf5n53f.pdf
KF5N53FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gatecharge and excellent avalanche characteristics. It is mainly suitable forelectronic ballast and switching mode power supplies.FEATURES VDSS= 525V,
kf5n53dz ds.pdf
KF5N53DZ/DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20electronic
kf5n53d i.pdf
KF5N53D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N53DThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20ele
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