KF5N53FS. Аналоги и основные параметры
Наименование производителя: KF5N53FS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 37.9 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 525 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 71 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.25 Ohm
Тип корпуса: TO220IS
Аналог (замена) для KF5N53FS
- подборⓘ MOSFET транзистора по параметрам
KF5N53FS даташит
kf5n53fs.pdf
KF5N53FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 525V
kf5n53f.pdf
KF5N53F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 525V,
kf5n53dz ds.pdf
KF5N53DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic
kf5n53d i.pdf
KF5N53D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N53D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 ele
Другие MOSFET... KF5N50FSA , KF5N50FZ , KF5N50FZA , KF5N50IZ , KF5N50PZ , KF5N53D , KF5N53DS , KF5N53F , IRF9640 , KF5N60D , KF5N60F , KF5N60FZ , KF5N60I , KF5N60P , KF5N65D , KF5N65F , KF6N60D .
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Список транзисторов
Обновления
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