KF5N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF5N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
Paquete / Cubierta: TO220IS
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KF5N60F Datasheet (PDF)
kf5n60p kf5n60f.pdf

KF5N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_switching mode power supplies. A 9.9
kf5n60fz.pdf

KF5N60P/F/PZ/FZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60P, KF5N60PZAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode pow
kf5n60p-f.pdf

KF5N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_switching mode power supplies. A 9.9
kf5n60d i.pdf

KF5N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20ele
Otros transistores... KF5N50FZA , KF5N50IZ , KF5N50PZ , KF5N53D , KF5N53DS , KF5N53F , KF5N53FS , KF5N60D , EMB04N03H , KF5N60FZ , KF5N60I , KF5N60P , KF5N65D , KF5N65F , KF6N60D , KF6N60F , KF6N60I .
History: NDS356P
History: NDS356P



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