KF5N60F. Аналоги и основные параметры
Наименование производителя: KF5N60F
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 38 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 60 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.7 Ohm
Тип корпуса: TO220IS
Аналог (замена) для KF5N60F
- подборⓘ MOSFET транзистора по параметрам
KF5N60F даташит
kf5n60p kf5n60f.pdf
KF5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9
kf5n60fz.pdf
KF5N60P/F/PZ/FZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P, KF5N60PZ A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode pow
kf5n60p-f.pdf
KF5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9
kf5n60d i.pdf
KF5N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 ele
Другие MOSFET... KF5N50FZA , KF5N50IZ , KF5N50PZ , KF5N53D , KF5N53DS , KF5N53F , KF5N53FS , KF5N60D , AON7403 , KF5N60FZ , KF5N60I , KF5N60P , KF5N65D , KF5N65F , KF6N60D , KF6N60F , KF6N60I .
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Список транзисторов
Обновления
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