KF7N68F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF7N68F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 680 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 24 nC
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 111 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO220IS
Búsqueda de reemplazo de KF7N68F MOSFET
KF7N68F Datasheet (PDF)
kf7n68f.pdf

KF7N68FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSavalanche characteristics. It is mainly suitable for active power factor_A 10.16 0.2+correction and switching mode power supplie
kf7n60p kf7n60f.pdf

KF7N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction and switching mode power supp
kf7n65fm.pdf

KF7N65FMSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppli
kf7n65p-f.pdf

KF7N65P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N65PAThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSGcorrection and switching mode power suppli
Otros transistores... KF7N50D , KF7N50F , KF7N50I , KF7N50P , KF7N60F , KF7N60P , KF7N65F , KF7N65P , IRF540N , KF7N80F , KF8N60F , KF8N60P , KF9N25D , KF9N25F , KF9N25P , KF9N50F , KF9N50P .
History: NTMFS5C430NLT1G | CS2N60FA9H
History: NTMFS5C430NLT1G | CS2N60FA9H



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