KF7N68F datasheet, аналоги, основные параметры
Наименование производителя: KF7N68F 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 52 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 680 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 111 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: TO220IS
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Аналог (замена) для KF7N68F
- подборⓘ MOSFET транзистора по параметрам
KF7N68F даташит
kf7n68f.pdf
KF7N68F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS avalanche characteristics. It is mainly suitable for active power factor _ A 10.16 0.2 + correction and switching mode power supplie
kf7n60p kf7n60f.pdf
KF7N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power supp
kf7n65fm.pdf
KF7N65FM SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli
kf7n65p-f.pdf
KF7N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power suppli
Другие IGBT... KF7N50D, KF7N50F, KF7N50I, KF7N50P, KF7N60F, KF7N60P, KF7N65F, KF7N65P, IRF540, KF7N80F, KF8N60F, KF8N60P, KF9N25D, KF9N25F, KF9N25P, KF9N50F, KF9N50P
Параметры MOSFET. Взаимосвязь и компромиссы
History: FQPF9N90C | SVF12N60CFJ | SI2377EDS
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