KHB1D0N60D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KHB1D0N60D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 20 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 9.5 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de KHB1D0N60D MOSFET
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KHB1D0N60D datasheet
khb1d0n60d i.pdf
KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode powe
khb1d0n60i.pdf
KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 1.0A
khb1d0n60g.pdf
SEMICONDUCTOR KHB1D0N60G N-Ch Planer MOSFET TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. FEATURES VDSS= 600V, ID= 0.4A Drain-Source ON Resistance
khb1d0n70g.pdf
KHB1D0N70G SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast B C switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. N DIM MILLIMETERS A 4.70 MAX E K B
Otros transistores... KF9N25D , KF9N25F , KF9N25P , KF9N50F , KF9N50P , KF3N80D , KF3N80I , KF60N06P , IRF3710 , KHB1D0N70G , KHB1D9N60D , KHB1D9N60I , KHB2D0N60F , KHB2D0N60F2 , KHB2D0N60P , KHB3D0N70F , KHB3D0N70P .
History: UPA1772 | 2SJ649 | 2SK3650-01L
History: UPA1772 | 2SJ649 | 2SK3650-01L
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