KHB1D0N60D. Аналоги и основные параметры
Наименование производителя: KHB1D0N60D
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 28 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 20 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 9.5 Ohm
Тип корпуса: DPAK
Аналог (замена) для KHB1D0N60D
- подборⓘ MOSFET транзистора по параметрам
KHB1D0N60D даташит
khb1d0n60d i.pdf
KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode powe
khb1d0n60i.pdf
KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 1.0A
khb1d0n60g.pdf
SEMICONDUCTOR KHB1D0N60G N-Ch Planer MOSFET TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. FEATURES VDSS= 600V, ID= 0.4A Drain-Source ON Resistance
khb1d0n70g.pdf
KHB1D0N70G SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast B C switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. N DIM MILLIMETERS A 4.70 MAX E K B
Другие MOSFET... KF9N25D , KF9N25F , KF9N25P , KF9N50F , KF9N50P , KF3N80D , KF3N80I , KF60N06P , IRF3710 , KHB1D0N70G , KHB1D9N60D , KHB1D9N60I , KHB2D0N60F , KHB2D0N60F2 , KHB2D0N60P , KHB3D0N70F , KHB3D0N70P .
History: JMSL1040AU | KF60N06P
History: JMSL1040AU | KF60N06P
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Список транзисторов
Обновления
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